Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

نویسندگان

  • K. J. Cheetham
  • S. J. Sweeney
  • A. Krier
  • I. P. Marko
  • A. Aldukhayel
چکیده

Related Articles Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Appl. Phys. Lett. 99, 143101 (2011) Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate J. Appl. Phys. 110, 073102 (2011) Effect of organic bulk heterojunction as charge generation layer on the performance of tandem organic light-emitting diodes J. Appl. Phys. 110, 074504 (2011) Self-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode J. Appl. Phys. 110, 073103 (2011) Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer Appl. Phys. Lett. 99, 131111 (2011)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mm

The spontaneous electroluminescence emission of InAs light-emitting diodes ~LEDs! operating at 3.3 mm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant curre...

متن کامل

Investigation of the Effect of Recombination on Superluminescent Light-Emitting Diode Output Power Based on Nitride Pyramid Quantum Dots

In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to sol...

متن کامل

An Analytical Model of SH-LED for Gas Sensor Instrumentation in Mid-infrared (2-5μm) Region

In this paper, we present an analytical model of a P-InAs0.36Sb0.20P0.44/ n-InAs/n-InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection instrumentation system based on optical absorption gas spectroscopy in the mid-infrared spectral region at room temperature. The model takes into account all dominating radiative and non-radiative recombination p...

متن کامل

Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)

Articles you may be interested in White light emission from exciplex using tris-(8-hydroxyquinoline)aluminum as chromaticity-tuning layer Appl. Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination Electroabsorption spectroscopy on tris-(8-hydroxyquinoline) aluminum-based light emitting diodes

متن کامل

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulati...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011